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1

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates

Kim, C. C., Choi, Y., Jang, Y. H., Kang, M. K., Joo, Minho, Noh, M. S., Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Yoon, Euijoon

Year:

2008

Language:

english

File:

PDF, 545 KB

english, 2008

2

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Comparison of different template structures for high quality and self-separation thick GaN growth

Fang, Yen-Hsiang, Chyi, Jen-Inn, Nanishi, Yasushi, Chao, Chu-Li, Chi, Tung-Wei, Morkoç, Hadis, Litton, Cole W., Chen, Kuei-Ming, Liu, Po-Chun, Piprek, Joachim, Yoon, Euijoon, Tsay, Jenq-Dar

Year:

2010

Language:

english

File:

PDF, 7.77 MB

english, 2010

3

Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing

Shin, In-Su, Lee, Donghyun, Lee, Keon-Hoon, You, Hyosang, Moon, Dae Young, Park, Jinsub, Nanishi, Yasuishi, Yoon, Euijoon

Journal:

Thin Solid Films

Year:

2013

Language:

english

File:

PDF, 1.71 MB

english, 2013

4

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Verma, Jai K., Protasenko, Vladimir V., Islam, S. M., Xing, Huili, Jena, Debdeep

Year:

2014

Language:

english

File:

PDF, 637 KB

english, 2014

5

Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET

Han, Kyoung-Rok, Choi, Byung-Kil, Park, Tai-su, Yoon, Euijoon, Chung, In-Young, Lee, Jong-Ho

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 155 KB

english, 2005

6

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Development of high-power UV LEDs for epoxy curing applications

Liu, W. H., Chyi, Jen-Inn, Nanishi, Yasushi, Chu, C. F., Cheng, C. C., Morkoç, Hadis, Litton, Cole W., Hsu, K. H., Chung, Y. T., Piprek, Joachim, Yoon, Euijoon, Wang, Y. K., Li, C. C., Chu, J. Y., Fan

Year:

2010

Language:

english

File:

PDF, 1.02 MB

english, 2010

7

The effects of low temperature buffer layer on the growth of pure Ge on Si(001)

Keun Wook Shin, Hyun-Woo Kim, Jungsub Kim, Changjae Yang, Sangsoo Lee, Euijoon Yoon

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 946 KB

english, 2010

8

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Keon-Hun Lee, Sung Hyun Park, Jong Hack Kim, Nam Hyuk Kim, Min Hwa Kim, Hyunseok Na, Euijoon Yoon

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 536 KB

english, 2010

9

Competitive growth mechanisms of InAs quantum dots on InxGa1 − xAs layer during post growth interruption

Changjae Yang, Jungsub Kim, Uk Sim, Jaeyel Lee, Won Jun Choi, Euijoon Yoon

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1006 KB

english, 2010

10

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Gao, Haiyong, Lee, Jaesoong, Ni, Xianfeng, Leach, Jacob, Özgür, Ümit, Morkoç, Hadis, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 1.80 MB

english, 2011

11

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model

Jang, Yuseong, Jang, Dong-Hyun, Shim, Jong-In, Shin, Dong-Soo, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 2.15 MB

english, 2011

12

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Kayis, Cemil, Zhu, C. Y., Wu, Mo, Li, Xing, Özgür, Ümit, Morkoç, Hadis, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 700 KB

english, 2011

13

Comparative analysis of oxide phase formation and its effects on electrical properties of SiO2/InSb metal-oxide-semiconductor structures

Jaeyel Lee, Sehun Park, Jungsub Kim, Changjae Yang, Sujin Kim, Chulkyun Seok, Jinsub Park, Euijoon Yoon

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 695 KB

english, 2012

14

Improved Emission Efficiency in InGaN Light-Emitting Diodes Using Reverse Bias in Pulsed Voltage Operation

Jaehee Cho, Euijoon Yoon, Hyunsoo Kim, Yongjo Park, Joon Seop Kwak

Journal:

IEEE Photonics Technology Letters

Year:

2008

Language:

english

File:

PDF, 211 KB

english, 2008

15

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Kim, Yong Seung, Lee, Jae Hong, Kim, Young Duck, Jerng, Sahng-Kyoon, Joo, Kisu, Kim, Eunho, Jung, Jongwan, Yoon, Euijoon, Park, Yun Daniel, Seo, Sunae, Chun, Seung-Hyun

Journal:

Year:

2013

Language:

english

File:

PDF, 451 KB

english, 2013

16

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes

Chen, Fang-Ming, Liou, Bo-Ting, Chang, Yi-An, Chang, Jih-Yuan, Kuo, Yih-Ting, Kuo, Yen-Kuang, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi

Year:

2013

Language:

english

File:

PDF, 353 KB

english, 2013

17

Reconstruction and evaporation at graphene nanoribbon edges

Lee, Gun-Do, Wang, C. Z., Yoon, Euijoon, Hwang, Nong-Moon, Ho, K. M.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 672 KB

english, 2010

18

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

Fan, Qian, Leach, Jacob H., Wu, Mo, Xiao, Bo, Gu, Xing, Morkoç, Hadis, Handel, Peter H., Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Yoon, Euijoon

Year:

2008

Language:

english

File:

PDF, 429 KB

english, 2008

19

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - High voltage bulk GaN-based photoconductive switches for pulsed power applications

Leach, J. H., Metzger, R., Preble, E. A., Evans, K. R., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi

Year:

2013

Language:

english

File:

PDF, 345 KB

english, 2013

20

A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

Lee, Moonsang, Mikulik, Dmitry, Kim, Joosung, Tak, Youngjo, Kim, Junyoun, Shim, Munbo, Park, Youngsoo, Chung, Uin, Yoon, Euijoon, Park, Sungsoo

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 1.73 MB

english, 2013

21

One-step graphene coating of heteroepitaxial GaN films

Choi, Jae-Kyung, Huh, Jae-Hoon, Kim, Sung-Dae, Moon, Daeyoung, Yoon, Duhee, Joo, Kisu, Kwak, Jinsung, Chu, Jae Hwan, Kim, Sung Youb, Park, Kibog, Kim, Young-Woon, Yoon, Euijoon, Cheong, Hyeonsik, Kwon

Journal:

Year:

2012

Language:

english

File:

PDF, 1.46 MB

english, 2012

22

Piezoelectric and Pyroelectric Properties of Pb(Zr,Ti)O 3 Films for Micro-Sensors and Actuators

Yang, Jeong-Suong, Kim, Seung-Hyun, Yeom, Jung-Hoon, Koo, Chang-Young, Hwang, Cheol Seong, Yoon, Euijoon, Kim, Dong-Joo, Ha, Jowoong

Journal:

Integrated Ferroelectrics

Year:

2003

Language:

english

File:

PDF, 258 KB

english, 2003

23

Ge surface-energy-driven secondary grain growth via two-step annealing

Lee, Sangsoo, Son, Yong-Hoon, Park, Yongjo, Hwang, Kihyun, Shin, Yoo Gyun, Yoon, Euijoon

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 2.23 MB

english, 2014

24

[IEEE 2013 IEEE 10th International Conference on Group IV Photonics (GFP) - Seoul, Korea (South) (2013.08.28-2013.08.30)] 10th International Conference on Group IV Photonics - Epitaxial Ge growth on Si(001) substrates and in-situ doping using UHV-CVD

Shin, Keun Wook, Yoon, Euijoon

Year:

2013

Language:

english

File:

PDF, 839 KB

english, 2013

25

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Moe, Craig G., Grandusky, James R., Chen, Jianfeng, Kitamura, Ken, Mendrick, Mark C., Jamil, Muhammad,

Year:

2014

Language:

english

File:

PDF, 246 KB

english, 2014

26

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Brault, Julien, Damilano, Benjamin, Courville, Aimeric, Leroux, Mathieu, Kahouli, Abdelkarim, Korytov,

Year:

2014

Language:

english

File:

PDF, 608 KB

english, 2014

27

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Large-area bow-free n + GaN templates by HVPE for LEDs

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Leach, J. H., Shishkin, Y., Udwary, K., Preble, E. A., Evans, K. R.

Year:

2014

Language:

english

File:

PDF, 753 KB

english, 2014

28

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Cathodoluminescence spectroscopy on selectively grown GaN nanowires

Schumann, T., Gotschke, T., Limbach, F., Stoica, T., Calarco, R., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 14.48 MB

english, 2011

29

Piezoelectric and Pyroelectric Properties of Pb(Zr,Ti)O 3 Films for Micro-Sensors and Actuators

Yang, Jeong-Suong, Kim, Seung-Hyun, Yeom, Jung-Hoon, Koo, Chang-Young, Hwang, Cheol Seong, Yoon, Euijoon, Kim, Dong-Joo, Ha, Jowoong

Journal:

Integrated Ferroelectrics

Year:

2003

Language:

english

File:

PDF, 230 KB

english, 2003

30

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors

Chyi, Jen-Inn, Jeong, Tak, Kim, Seung Whan, Nanishi, Yasushi, Morkoç, Hadis, Baek, Jong Hyeob, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 1.92 MB

english, 2011

31

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Fermi level effect on strain of Si-doped GaN

Xie, Jinqiao, Chyi, Jen-Inn, Nanishi, Yasushi, Mita, Seiji, Collazo, Ramón, Morkoç, Hadis, Piprek, Joachim, Rice, Anthony, Tweedie, James, Yoon, Euijoon, Sitar, Zlatko

Year:

2011

Language:

english

File:

PDF, 1.38 MB

english, 2011

32

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Piezoelectric quantum 1/f noise in nitride-based heterostructures

Handel, Peter H., Morkoç, Hadis, Litton, Cole W., Morkoc, Hadis, Sia, Engkee, Chyi, Jen-Inn, Nanishi, Yasushi, Truong, Amanda M., Yoon, Euijoon

Year:

2008

Language:

english

File:

PDF, 580 KB

english, 2008

33

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Chiu, Ching-Hsueh, Chyi, Jen-Inn, Nanishi, Yasushi, Lin, Da-Wei, Li, Zhen-Yu, Morkoç, Hadis, Piprek, Joachim, Ling, Shih-Chun, Kuo, Hao-Chung, Yoon, Euijoon, Lu, Tien-Chang, Wang, Shing-Chung, Liao, W

Year:

2011

Language:

english

File:

PDF, 564 KB

english, 2011

34

Heterogeneously integrated high-performance GaAs single-junction solar cells on copper

Geum, Dae-Myeong, Park, Min-Su, Kim, SangHyeon, Choi, Won Jun, Kim, Chang Zoo, Yoon, Euijoon

Journal:

Journal of the Korean Physical Society

Year:

2017

Language:

english

File:

PDF, 825 KB

english, 2017

35

Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates

Lee, Donghyun, Lee, Seungmin, Kim, Giwoong, Kim, Jongmyeong, Jang, Jeonghwan, Oh, Jehong, Moon, Daeyoung, Park, Yongjo, Yoon, Euijoon

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 906 KB

english, 2018

36

The influence of hydrogen concentration in amorphous carbon films on mechanical properties and fluorine penetration: a density functional theory and ab initio molecular dynamics study

Park, Hwanyeol, Woo, Daekwang, Lee, Jong Myeong, Park, Se Jun, Lee, Sungwoo, Kim, Ho Jun, Yoon, Euijoon, Lee, Gun-Do

Journal:

Year:

2020

Language:

english

File:

PDF, 1.20 MB

english, 2020

37

Effect of Hydrogen on GaN Growth by Remote Plasma-Enhanced Metal-Organic Chemical Vapor Deposition

Min Hong Kim, Hyun Jin Kim, Hyun Seok Na, Feng Qi, Euijoon Yoon

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 231 KB

english, 1999

38

Indium Nanowires Synthesized at an Ultrafast Rate

Seung Soo Oh, Do Hyun Kim, Myoung-Woon Moon, Ashkan Vaziri, Miyoung Kim, Euijoon Yoon, Kyu Hwan Oh, John W. Hutchinson

Journal:

Advanced Materials

Year:

2008

Language:

english

File:

PDF, 332 KB

english, 2008

39

Optical properties of Si-doped InAs/InP quantum dots

Heedon Hwang, Kwangmin Park, Jong-Hoon Kang, Sukho Yoon, Euijoon Yoon

Journal:

Current Applied Physics

Year:

2003

Language:

english

File:

PDF, 173 KB

english, 2003

40

Guest editorial

Eun Kyu Kim, Joo Yull Rhee, Sung Jae Lee, Euijoon Yoon, Hyeonsik M. Cheong, Il Ki Han

Journal:

Current Applied Physics

Year:

2006

Language:

english

File:

PDF, 46 KB

english, 2006

41

5th Nano Korea 2007 symposium

Il Ki Han, Eun Kyu Kim, Sung Jae Lee, Joo Yull Rhee, Euijoon Yoon, Hyeonsik M. Cheng

Journal:

Current Applied Physics

Year:

2009

Language:

english

File:

PDF, 91 KB

english, 2009

42

6th Nano Korea 2008 Symposium

Sung Jae Lee, Il Ki Han, Eun Kyu Kim, Joo Yull Rhee, Euijoon Yoon, Hyeonsik M. Cheong

Journal:

Current Applied Physics

Year:

2009

Language:

english

File:

PDF, 91 KB

english, 2009

43

On astigmatism of multi-beam optical stress sensor mounted at large incident angle

Jinbo Jiang, Heedon Hwang, Hak Sun Lee, Byongju Kim, Kee Bong, Euijoon Yoon

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 220 KB

english, 2004

44

Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD

Sung-Nam Lee, Tan Sakong, Wonseok Lee, Hosun Paek, Joongkon Son, Euijoon Yoon, Okhyun Nam, Y. Park

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 200 KB

english, 2004

45

Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Hyun Jin Kim, Hyunseok Na, Soon-Yong Kwon, Hui-Chan Seo, Hee Jin Kim, Yoori Shin, Keon-Hun Lee, Dong Hyuk Kim, Hye Jeong Oh, Sukho Yoon, Cheolsoo Sone, Yongjo Park, Euijoon Yoon

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 344 KB

english, 2004

46

Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVD

Sung-Nam Lee, JoongKon Son, Tan Sakong, Wonseok Lee, Hosun Paek, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, Okhyun Nam, Yongjo Park

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 209 KB

english, 2004

47

Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD

Sung-Nam Lee, JoongKon Son, Hosun Paek, Tan Sakong, Wonseok Lee, Kihong Kim, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, YoonJae Lee, SangSoo Kim, DoYoung Noh, Okhyun Nam, Yongjo Park

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 400 KB

english, 2005

48

Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

Jae Kyeong Jeong, Jung-Hae Choi, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 309 KB

english, 2005

49

In situ monitoring of the growth procedure of InAs layer by spectral reflectance

Eungjin Ahn, Young Soo Lee, Jungsub Kim, Young Dong Kim, Euijoon Yoon

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 473 KB

english, 2007

50

Thermodynamic study of AlGaN composition grown by metalorganic chemical vapor deposition

Dong Woo Song, Hee Jin Kim, Yong Seon Jeon, Euijoon Yoon

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 177 KB

english, 2007